+ 0. 5 Dimension: 1 4"x 1 4" x 0. 26 + 0. 03 mm Polished: Two sides epi polished Surface Roughness: < 10 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 08 A c = 15. 117 A Stacking sequence: ABCACB (6H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 03 eV ( Indirect) Conductivity type: N TTV Bow Warp:<25 um"> + 0. 5 Dimension: 1 4"x 1 4" x 0. 26 + 0. 03 mm Polished: Two sides epi polished Surface Roughness: < 10 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 08 A c = 15. 117 A Stacking sequence: ABCACB (6H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 03 eV ( Indirect) Conductivity type: N TTV Bow Warp:<25 um"> + 0. 5 Dimension: 1 4"x 1 4" x 0. 26 + 0. 03 mm Polished: Two sides epi polished Surface Roughness: < 10 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 08 A c = 15. 117 A Stacking sequence: ABCACB (6H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 03 eV ( Indirect) Conductivity type: N TTV Bow Warp:<25 um"> SiC - 6H (0001), 1/4"x1/4"x0.26 mm , two sides polished Y Please click the picture below – salirdelamultipropiedad.es

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SiC - 6H (0001), 1/4"x1/4"x0.26 mm , two sides polished Y Please click the picture below

$106.88

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Please click the picture below to see XRD and particle distribution curve

Various graphs and curves can be created by software based on user definition

This version does not include the Stainless steel vacuum flanges with valves

Polishing:                       One  side polished

SiC - 6H (0001), 1/4"x1/4"x0.26 mm , two sides polished Y Please click the picture belowSpecifications of Substrate Orientation: <0001> + 0. 5 Dimension: 1 4"x 1 4" x 0. 26 + 0. 03 mm Polished: Two sides epi polished Surface Roughness: < 10 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 08 A c = 15. 117 A Stacking sequence: ABCACB (6H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 03 eV ( Indirect) Conductivity type: N TTV Bow Warp:<25 um

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