GaN Single Crystal Substrate,N-type, (10-10), 5 x10 x 0.3 mm , 1SP TGA 8682 g/mol
$401.93
Description
8682 g/mol
Core Size: 76 mm (3 inches)
The DNP aluminum laminated film (91 um) is used as a casing material for the polymer Li-Ion battery
Laminate strength
GaN Single Crystal Substrate,N-type, (10-10), 5 x10 x 0.3 mm , 1SP TGA 8682 g/molGaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of Substrate Orientation: M axis (10 10) + 1. 0 o Type: N type(undoped) Nominal Thickness 300+ 25 microns Dimension: 5 mm x 10 mm +
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
, 5 x10 x 0.3 mm , 1SP TGA 8682 g/mol){kind=link}