NGG (Nd3Ga5O12) Substrate (111 ) 5x5x0.5 mm, 1 SP - NGGc050505S1 Orientation 001 sapphire wafer is being used

sapphire wafer is being used extensively as a substrate for III-V nitrides and magnetic epitaxial films due to its better lattice mismatch

This is very useful where multiple products are processed using the same controller but require different parameters to be set

Shipped in a vacuum bag

The micrometer head's controllable accuracy is 10 microns

NGG (Nd3Ga5O12) Substrate (111 ) 5x5x0.5 mm, 1 SP - NGGc050505S1 Orientation 001 sapphire wafer is being usedSingle crystal Nd3Ga5O12 ( NGG) Substrate Size: 5mm x 5mm x 0. 5 mm Orientation: (111) Polishing: one side polished. Surface finish (RMS or Ra) : < 5A Packing: in 1000 class clean room with plastic bag Typical Properties of NGG Structure: Cubic Lattice Constant: a=12. 505 Purity: > 99. 99% Melting Point: 1550 oC Density: 6. 60 g cm3 Hardness: ~7. 2mohns Reflectivity ~1. 94: Dielectric constant ~ 12. 08 XRD: Reference article: DIELECTRIC PROPERTIES AND