Al2O3 - Sapphire Wafer 10 x 10 x 1.0 mm, A plane (11-20), 2 SP - ALA101010S2 YSZ (Yittrium stabilized ZrO2) Edge Chamfering: Ground with 45

Edge Chamfering: Ground with 45 degree chamfering

Operation Instructions

Please always keep the heating or cooling rate less than 5oC/ minute

also called L927

Al2O3 - Sapphire Wafer 10 x 10 x 1.0 mm, A plane (11-20), 2 SP - ALA101010S2 YSZ (Yittrium stabilized ZrO2) Edge Chamfering: Ground with 45Features: Sapphire substrate is the popular substrates for III V nitrides, superconductor and magnetic epi film due to less mis matched lattice and stable chemical and physical properties Wafer size: 10 mm x 10 mm x 1. 0mm thick Orientation tolerance: + 0. 5 o. A plane orientation Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 5 A 2 sides polished Package: Each wafer is packed in 1000 class clean room with