+ . 5 degree Thickness: 2. 50. 5m Resistivity: 1 4 ohm cm Finish: Front Side Polished Buried Thermal Oxide: Thickness: 1. 0um + 0. 1 um Handle Wafers: Type Dopant P Type, B doped Orientation <1 0 0>+ . 5 degree Resistivity: 10 20 ohm cm Thickness: 625 + 15 um Finish: As received (not polished) Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner Wafer"> + . 5 degree Thickness: 2. 50. 5m Resistivity: 1 4 ohm cm Finish: Front Side Polished Buried Thermal Oxide: Thickness: 1. 0um + 0. 1 um Handle Wafers: Type Dopant P Type, B doped Orientation <1 0 0>+ . 5 degree Resistivity: 10 20 ohm cm Thickness: 625 + 15 um Finish: As received (not polished) Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner Wafer"> + . 5 degree Thickness: 2. 50. 5m Resistivity: 1 4 ohm cm Finish: Front Side Polished Buried Thermal Oxide: Thickness: 1. 0um + 0. 1 um Handle Wafers: Type Dopant P Type, B doped Orientation <1 0 0>+ . 5 degree Resistivity: 10 20 ohm cm Thickness: 625 + 15 um Finish: As received (not polished) Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner Wafer"> SOI Wafer: 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped ) Be Lithium foil is widely used – salirdelamultipropiedad.es

New Arrivals are Here-Fast Shipping from Our USA Warehouse

SOI Wafer: 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped ) Be Lithium foil is widely used

$222.56

Quantity
Description

Lithium foil is widely used for Li-ion and Li metal rechargeable battery R&D

Orientation: C axi textured

4PO4 powder with surface carbon coating has the advantages of higher energy density

SOS is primarily used in aerospace and militaryapplications because of its inherent resistance to radiation

SOI Wafer: 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped ) Be Lithium foil is widely usedPSpecifications Device Layer Diameter: 6" Type Dopant: N type P doped Orientation: <1 0 0>+ . 5 degree Thickness: 2. 50. 5m Resistivity: 1 4 ohm cm Finish: Front Side Polished Buried Thermal Oxide: Thickness: 1. 0um + 0. 1 um Handle Wafers: Type Dopant P Type, B doped Orientation <1 0 0>+ . 5 degree Resistivity: 10 20 ohm cm Thickness: 625 + 15 um Finish: As received (not polished) Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner Wafer

Shipping Notes
  • Free Standard Shipping on $100+ Orders to the USA.
  • Except Preorder products are shipped in 48 hours.
  • Delivery to the USA:
  1. Standard Shipping : 3-10 business days
  • If time is of the essence, please consider selecting expedited delivery for faster service.

View More

  • Product more
  • Collection:

You may also like

recommand products

50$ Store Credit
Your message