Conducting Type N Carrier Concentration 2. 7 x1016 cm3 Resistivity 1. 53"> Conducting Type N Carrier Concentration 2. 7 x1016 cm3 Resistivity 1. 53"> Conducting Type N Carrier Concentration 2. 7 x1016 cm3 Resistivity 1. 53"> GaP Wafer, undoped (111) 2"x0.4 mm, 2sp, Lab Ware Click the below to view – salirdelamultipropiedad.es

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GaP Wafer, undoped (111) 2"x0.4 mm, 2sp, Lab Ware Click the below to view

$344.43

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OF orientation: parallel {10-10} +/- 5 degree

High quality glass

Visible Transmittance: 82-84

GaP Wafer, undoped (111) 2"x0.4 mm, 2sp, Lab Ware Click the below to viewGaP single crystal wafer, Size: 2" diameter x 0. 4mm, Doping: undoped Conducting type: Orientation: (111) Polished: two sides polishedwith P terminated side facing down in the box. Surface finish (RMS or Ra) : < 8A Typical Physical Properties Crystal Structure Cubic. Growth Method CZ (LEC) Density Mobility: 150cmE2 Vs Thermal Expansion Dopant undoped Crystal growth axis <111> Conducting Type N Carrier Concentration 2. 7 x1016 cm3 Resistivity 1. 53

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